aod3n60/AOU3N60 600v,2.5a n-channel mosfet 700v@150 i d (at v gs =10v) 2.5a r ds(on) (at v gs =10v) < 3.5 w symbol v ds v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc maximum junction-to-ambient a,g t c =25c - 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 300 c junction and storage temperature range -50 to 150 c power dissipation b p d v 30 gate-source voltage t c =100c a i d t c =25c 2.5 1.6 the aod3n60 & AOU3N60 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 600 8 pulsed drain current c continuous drain current b mj avalanche current c 60 repetitive avalanche energy c derate above 25 o c 56.8 0.45 a 2 single pulsed avalanche energy h 120 mj v/ns 5 maximum case-to-sink a maximum junction-to-case d,f c/w c/w 1.8 0.5 2.2 g d s www.freescale.net.cn 1/6 general description features
symbol min typ max units 600 700 bv dss / ? tj 0.65 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3 4 4.5 v r ds(on) 2.9 3.5 w g fs 2.8 s v sd 0.64 1 v i s maximum body-diode continuous current 2 a i sm 8 a c iss 240 304 370 pf c oss 25 31.4 38 pf c rss 2.6 3.3 4 pf r g 2.3 2.9 6 w q g 9.9 12 nc q gs 2.1 3 nc q gd 4.6 6 nc t d(on) 17 20 ns t r 17 20 ns t d(off) 24 30 ns t f 16 20 ns t rr 175 210 ns q rr 1.4 1.7 m c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c body diode reverse recovery charge i f =2.5a,di/dt=100a/ m s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =300v, i d =2.5a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =480v, i d =2.5a gate source charge gate drain charge v ds =5v i d =250 m a v ds =480v, t j =125c i s =1a,v gs =0v v ds =40v, i d =1.25a forward transconductance dynamic parameters zero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =30v i dss zero gate voltage drain current v ds =600v, v gs =0v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss m a v body diode reverse recovery time static drain-source on-resistance v gs =10v, i d =1.25a reverse transfer capacitance i f =2.5a,di/dt=100a/ m s,v ds =100v v gs =0v, v ds =25v, f=1mhz switching parameters a. the value of r q ja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. d. the r q ja is the sum of the thermal impedence from junction to case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25c. h. l=60mh, i as =2a, v dd =150v, r g =10 ? , starting t j =25c www.freescale.net.cn 2/6 aod3n60/AOU3N60 600v,2.5a n-channel mosfet
typical electrical and thermal characteristics 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c i d =30a 25c 125c 0 1 2 3 4 5 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1 2 3 4 5 6 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) v gs =10v 0 0.5 1 1.5 2 2.5 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =1a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 t j ( o c) figure 5: break down vs. junction temperature bv dss (normalized) www.freescale.net.cn 3/6 aod3n60/AOU3N60 600v,2.5a n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 12 14 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =480v i d =2.5a 1 10 100 1000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.2c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d www.freescale.net.cn 4/6 aod3n60/AOU3N60 600v,2.5a n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 t case (c) figure 12: power de-rating (note b) power dissipation (w) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t case (c) figure 13: current de-rating (note b) current rating i d (a) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) power (w) t j(max) =150c t a =25c 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d www.freescale.net.cn 5/6 aod3n60/AOU3N60 600v,2.5a n-channel mosfet
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar www.freescale.net.cn 6/6 aod3n60/AOU3N60 600v,2.5a n-channel mosfet
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